• 李水明在AIP Advances 杂志上发表Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)论文
  • [2016-06-14]
  • 【2016】Shuiming Li, Yu Zhou, Hongwei Gao, Shujun Dai, Guohao Yu, Qian Sun, Yong Cai, Baoshun Zhang, Sheng Liu, and Hui Yang , “Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111) ”, AIP Advances 6, 035308 (2016); doi: 10.1063/1.4944483

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