• 2017 High-performance mid-wave InAs/GaSb superlattice infrared detectors grown by production-scale MOCVD
  • [2018-07-27]
  • High-performance mid-wavelength InAs/GaSb superlattice infrared detectors grown by  production-scale metalorganic chemical vapor deposition

    Y. Huang, M. Xiong, Q. H. Wu, X. Dong, Y.C. Zhao, Y. Zhao, W.H. Shi, X. H. Miao, and B. S. Zhang, 
    IEEE J. Quantum Electron.53 (5), 4000305 (2017). doi:10.1109/JQE.2017.2740121

    We demonstrate high-performance mid-wavelength p-i-n infrared detectors based on InAs/GaSb type-ІІ superlattices (SLs) grown by a production-scale metalorganic chemical vapor deposition system. Through a specially-designed gas switching sequence and the use of GaAs-type of interfacial layers, strain-balanced SLs with excellent material quality were obtained, as evidenced by atomic force microscopy, photoluminescence, x-ray diffraction, and transmission electron microscopy. The processed devices, with a cutoff wavelength around 4.8 μm, exhibited a R0A of 2.3×104 Ωcm2 and a peak responsivity of 1.4 A/W at 77 K. A specific detectivity of 7.2×1012 cmHz1/2/W was achieved at 3.7 μm. These values are comparable with those reported for InAs/GaSb SL detectors with similar cut-off wavelengths grown by molecular beam epitaxy.

    Fig. 3. Cross-sectional dark-filed TEM image in (002) two-beam condition

     Fig. 3. Cross-sectional dark-filed TEM image in (002) two-beam condition of a representative portion of the SL detector. InAs and GaSb layers are labele

     

     

  • 上一个:
  • 上一个: