发表文章
  • [2016 Nature Photonics] Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si(PDF)2018-07-26
  • [2017] High-power AlGaN-based near ultraviolet light emitting diodes grown on Si(111)(PDF)2018-07-26
  • [2017] Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment(PDF)2018-07-26
  • [2017] p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process(PDF)2018-07-26
  • [2018] Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure(PDF)2018-07-26
  • [2018] Room-temperature electrically pumped InGaN-based microdisk laser grown on Si(PDF)2018-07-26
  • Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si(PDF)2018-07-26
  • [2018] Room-Temperature Electrically Injected AlGaN-Based nearUltraviolet Laser Grown on Si(PDF)2018-07-26
  • [2018] High fT AlGa(In)N/GaN HEMTs Grown on Si with a Low Gate Leakage and a High On/Off Current Ratio(PDF)2018-07-26
  • [2018] On-Chip Integration of GaN-Based Laser, Modulator,and Photodetector Grown on Si(PDF)2018-07-26
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