发表文章
  • Wen-xian Yang, Pan Dai, Lian Ji, Ming Tan, Yuan-yuan Wu, Shiro Uchida, Shu-long Lu , Hui Yang. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells. Applied Surface Science 389: 673–678 (2016) (PDF)2016-08-09
  • Pan Dai, Shulong Lu, Shiro Uchida, Lian Ji, Yuanyuan Wu, Ming Tan, Lifeng Bian, and Hui Yang. room-temperature wafer bonded GaInP/GaAs/InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy. Appl. Phys. Express. 9 016501 (2016)(PDF)2016-07-14
  • Yuanyuan Wu, Lian Ji, Pai Dai, Ming Tan, Shulong Lu*, Hui Yang. Lattice matched InGaAsP/InGaAs (1.05/0.73 eV) solar cells on InP grown by solid state molecular beam epitaxy. Jpn. J. Appl. Phys. 55 022301 (2016)(PDF)2016-07-14
  • J.X. Chen, D. S. Jiang, W. He, S. P. Jia, S.L.Lu, L.F. Bian, and H.Yang. Effects of an ultrathin interfacial layer on the photoluminescence properties of GaInP epilayer grown on Ge. J. Elec. Material. 45 1 (2015)(PDF)2016-07-14
  • Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long*, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Phys. Sin. 64 177802 (2015)(PDF)2016-07-14
  • J. L. Huang, W.Q. Ma, Y.H. Zhang, Y.L. Cao, K. Liu, W.J. Huang and S.L.Lu. Narrow-band type II superlattice photodetector with detection wavelength shorter than 2 um. IEEE Photonics Tech. Lett. 106 263502 (2015)(PDF)2016-07-14
  • J. L. Huang, W.Q. Ma, Y.H. Zhang, Y.L. Cao, K. Liu, W.J. Huang and S.L.Lu. Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector. Appl. Phys. Lett. 106 263502 (2015)(PDF)2016-07-14
  • R. Harasawa, N. Yamamoto, H. Wu, T. Aritake, S. L. Lu, L. Ji, and A. Tackeuchi. observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement. Phys. Status Solidi B. 252, 1244 (2015)(PDF)2016-07-14
  • Lu Jianya, Zheng Xinhe, Wang Naiming, Chen Xi, Li Baoji, Lu Shulong, Yang Hui. GaNAs/InGaAs superlattice solar cells with high N content in the barrier grown by all solid-state molecular beam epitaxy. Chin. Phys. Lett. 32, 057301 (2015)(PDF)2016-07-14
  • M. Arimochi, T. Watanabe, H. Yoshida, T. Tange, I. Nomachi, M. Ikeda, P. Dai, W. He, L. Ji, S.L. Lu, H. Yang, and S. Uchida. III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique. Jpn. J. Appl. Phys. 54, 056601 (2015)(PDF)2016-07-14
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