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          The work group focuses on GaN-based high output power light emitting diode (LED). The technology of strainless epitaxy and Laser Lift-off of GaN from Sapphire Substrate are used to resolve the junction heat problem. The luminous flux and luminous efficiency of the single chip can reach 150-200lm and 60~80lm/W, respectively. The luminosity and the life-span are also the international advanced level. The advanced GaN-based LED epitaxial production lines are built now.
ADS:Dushu Lake, Higher Education Town, Ruoshui Road 389, Suzhou Industrial Park, Suzhou
Tel:0512-62872640 Fax:0512-62603079 Code:215123
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